P-N Junction Diode

Which of the following circuit diagram of p – n junction diode is (i) forward bias and in (ii) reverse bias:
    

In diode, increasing the forward voltage, the thickness of depletion layer ____

The breakdown mechanism in a lightly doped P-N junction under reverse biased condition is called _____ breakdown.

Low doping required for Avalanche breakdown in diodes. 

The breakdown that occurs in reverse bias conditions in a narrow junction diode is known as

Pick out the incorrect statement regarding reverse saturation current in the p-n junction diode.

 The reverse saturation current in a p-n junction diode is due to only the;

Is reverse saturation current dependent upon the change in temperature ? Explain.​

What is reverse saturation current in diode ? Why it is temperature dependent ?

When the p-n junction diode is reverse biased, the thickness of the depletion layer;

In a p-n junction diode;

The reading of the ammeter for a silicon diode in the given circuit is:

Currents flowing in each of the following circuits $\mathrm{A}$ and $\mathrm{B}$ respectively are

Identify the semiconductor devices whose characteristics are given below, in the order $\left(\mathrm{a}\right),\mathrm{ }\left(\mathrm{b}\right),\mathrm{ }\left(\mathrm{c}\right),\mathrm{ }\left(\mathrm{d}\right)$:

The forward-biased diode connection among the following is:

In case of p-n junction diode, the width of depletion region is

Find $V_{AB}$ for the circuit given below.

Ge & Si diodes conduct at knee voltage $0.3 \mathrm{V}$ & $0.7 \mathrm{V}$ respectively. If Ge diode connection are reversed, then value of $V_0$ changes by $x \mathrm{V}$, what is the value of $10x$?

In the circuit shown in figure, find the magnitude of maximum potential difference (in $\mathrm{V}$) between $\mathrm{A} \& \mathrm{B}?$

Calculate the value of output voltage ${\mathrm{V}}_0$ (in $\mathrm{V}$)(to the closest integer) if the Si diode and Ge diode conduct at $0.7 \mathrm{V}$ and $0.3 \mathrm{V}$ respectively as shown in figure.